Self-assembled structures, method of manufacture thereof and articles comprising the same

ABSTRACT

Disclosed herein is a composition comprising a graft block copolymer comprising a copolymer comprising a backbone polymer; and a first graft polymer that comprises a surface energy reducing moiety; the first graft polymer being grafted onto the backbone polymer; where the surface energy reducing moiety comprises a fluorine atom, a silicon atom, or a combination of a fluorine atom and a silicon atom; a photoacid generator; and a crosslinking agent.

BACKGROUND

This disclosure relates to self-assembled structures, methods ofmanufacture thereof and to articles comprising the same.

Block copolymers form self-assembled nanostructures in order to reducethe free energy of the system. Nanostructures are those having averagelargest widths or thicknesses of less than 100 nanometers (nm). Thisself-assembly produces periodic structures as a result of the reductionin free energy. The periodic structures can be in the form of domains,lamellae or cylinders. Because of these structures, thin films of blockcopolymers provide spatial chemical contrast at the nanometer-scale and,therefore, they have been used as an alternative low-costnano-patterning material for generating nanoscale structures. Whilethese block copolymer films can provide contrast at the nanometer scale,it is often difficult to produce copolymer films that can displayperiodicity at less than 60 nm. Modern electronic devices however oftenutilize structures that have a periodicity of less than 60 nm and it istherefore desirable to produce copolymers that can easily displaystructures that have average largest widths or thicknesses of less than60 nm, while at the same time displaying a periodicity of less than 60nm.

Many attempts have been made to develop copolymers that have averagelargest widths or thicknesses of less than 60 nm, while at the same timedisplaying a periodicity of less than 60 nm. The assembly of polymerchains into a regular array, and especially a periodic array, issometimes referred to as “bottom up lithography”. The processes forforming periodic structures for electronic devices from block copolymerswithin lithography are known as “directed self-assembly’. However, fourof the challenges and indeed greatest difficulties in trying to build aworkable electronic device from a periodic array have to do with firstlythe need to register or align that periodic array with great precisionand accuracy to the underlying elements of the circuit pattern, andsecondly the need to form non-periodic shapes in the pattern as part ofthe electronic circuit design, and thirdly the ability for the patternto form sharp bends and corners and line ends as part of the circuitdesign pattern layout requirements, and fourthly the ability for thepattern to be formed in a multitude of periodicities. These limitationswith bottom-up lithography using periodic patterns formed from blockcopolymers have resulted in the need to design complex chemoepitaxy orgraphoepitaxy process schemes for alignment, pattern formation anddefect reduction.

Conventional ‘top down’ lithography, which creates patterns throughprojection and focusing of light or energetic particles through a maskonto a thin photoresist layer on a substrate, or in the case of electronbeam lithography may involve projection of electrons through anelectromagnetic field in a patternwise manner onto a thin photoresistlayer on a substrate, has the advantage of being more amenable toconventional methods of alignment of the pattern formation to theunderlaying elements of the circuit pattern, and being able to formnon-periodic shapes in the pattern as part of the circuit design, beingable to directly form line ends and sharp bends, and the ability to formpatterns in a multiplicity of periodicities. However, top downlithography, in the case of optical lithography, is constrained in thesmallest pattern it can form, as a result of the diffraction of lightthrough mask openings whose dimension is similar or smaller than thewavelength, which causes loss of light intensity modulation between themasked and unmasked regions. Other important factors which limitresolution are light flare, reflection issues from various filminterfaces, imperfections in the optical quality of the lens elements,focal depth variations, photon and photoacid shot noise and line edgeroughness. In the case of electron beam lithography, the smallest usefulpattern sizes which can be formed are limited by the beam spot size, theability to stitch or merge writing patterns effectively and accurately,electron scatter and backscatter in the photoresist and underlyingsubstrates, electron and photoacid shot noise and line edge roughness.Electron beam lithography is also highly limited by throughput, sincethe images are patternwise formed pixel-by-pixel, because as smallerpixel dimensions are required for smaller pattern sizes, the number ofimaging pixels per unit area increases as the square of the pixel unitdimension.

SUMMARY

Disclosed herein too is a composition comprising a graft block copolymercomprising a copolymer comprising a backbone polymer; and a first graftpolymer that comprises a surface energy reducing moiety; the first graftpolymer being grafted onto the backbone polymer; where the surfaceenergy reducing moiety comprises a fluorine atom, a silicon atom, or acombination of a fluorine atom and a silicon atom; a photoacidgenerator; and a crosslinking agent.

Disclosed herein too is a method of manufacturing a photoresistcomprising mixing a composition comprising a copolymer comprising abackbone polymer; and a first graft polymer that comprises a surfaceenergy reducing moiety; the first graft polymer being grafted onto thebackbone polymer; where the surface energy reducing moiety comprises afluorine atom, a silicon atom, or a combination of a fluorine atom and asilicon atom; a photoacid generator; and a crosslinking agent; disposingthe composition on a substrate; forming a film on the substrate;disposing a mask on the film; exposing the film to electromagneticradiation to form a crosslinked film that comprises bottle-brushes;baking the film; and dissolving unreacted portions of the film.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic depiction of an exemplary brush polymer that isdisposed upon a substrate;

FIGS. 2A and 2B is a schematic depiction of an exemplary ordering thatoccurs when the brush polymer having a surface energy reducing moiety isdisposed upon a substrate;

FIG. 3 is a photomicrograph showing atomic force microscopy (AFM)results where the upper images show tapping mode AFM and the lowerimages are phase images for (A) the brush control composition (B) brushI and (C) brush II; and

FIG. 4 shows tapping mode AFM images of patterns generated by 30 kVelectron beam lithography (EBL). FIGS. 4A-4C depict AFM height images ofpatterns after post exposure baking-electron beam lithography (PEB-EBL)of a chemically amplified resist (CAR-I, CAR-II), and the brush controlat 250 μC/cm² exposure dosage respectively while Figure (D-F) depict AFMheight images of patterns after PEB-EBL of CAR-I, CAR-II, and the brushcontrol at 400 μC/cm² exposure dosage, respectively. FIGS. 4G-4H depictAFM height images of patterns from “direct”-EBL of CAR-I at 400 μC/cm²(G) and 600 μC/cm² (H) exposure dosages respectively. Scale bar=500 nm.

DETAILED DESCRIPTION

As used herein, “phase-separate” refers to the propensity of the blocksof block copolymers to form discrete microphase-separated domains, alsoreferred to as “microdomains” or “nanodomains” and also simply as“domains”. The blocks of the same monomer aggregate to form periodicdomains, and the spacing and morphology of domains depends on theinteraction, size, and volume fraction among different blocks in theblock copolymer. Domains of block copolymers can form duringapplication, such as during a spin-casting step, during a heating step,or can be tuned by an annealing step. “Heating”, also referred to hereinas “baking” or “annealing”, is a general process wherein the temperatureof the substrate and coated layers thereon is raised above ambienttemperature. “Annealing” can include thermal annealing, thermal gradientannealing, solvent vapor annealing, or other annealing methods. Thermalannealing, sometimes referred to as “thermal curing” can be a specificbaking process for fixing patterns and removing defects in the layer ofthe block copolymer assembly, and generally involves heating at elevatedtemperature (e.g., 150° C. to 350° C.), for a prolonged period of time(e.g., several minutes to several days) at or near the end of thefilm-forming process. Annealing, when performed, is used to reduce orremove defects in the layer (referred to as a “film” hereinafter) ofmicrophase-separated domains.

The self-assembling layer comprises a block copolymer having at least afirst block and a second block that forms domains through phaseseparation that orient perpendicular to the substrate upon annealing.“Domain”, as used herein, means a compact crystalline, semi-crystalline,or amorphous region formed by corresponding blocks of the blockcopolymer, where these regions may be lamellar or cylindrical and areformed orthogonal or perpendicular to the plane of the surface of thesubstrate and/or to the plane of a surface modification layer disposedon the substrate. In an embodiment, the domains may have an averagelargest dimension of 1 to 30 nanometers (nm), specifically 5 to 22 nm,and still more specifically 5 to 20 nm.

The term “M_(n)” used herein and in the appended claims in reference toa block copolymer of the present invention is the number averagemolecular weight of the block copolymer (in g/mol) determined accordingto the method used herein in the Examples. The term “M_(w)” used hereinand in the appended claims in reference to a block copolymer of thepresent invention is the weight average molecular weight of the blockcopolymer (in g/mol) determined according to the method used herein inthe Examples.

The term “PDI” or “

” used herein and in the appended claims in reference to a blockcopolymer of the present invention is the polydispersity (also calledpolydispersity index or simply “dispersity”) of the block copolymerdetermined according to the following equation:

${PDI} = {\frac{M_{w}}{M_{n}}.}$

The transition term “comprising” is inclusive of the transition terms“consisting of” and “consisting essentially of”. The term “and/or” isused herein to mean both “and” as well as “or”. For example, “A and/orB” is construed to mean A, B or A and B.

Disclosed herein is a graft block copolymer that comprises a polymer asits backbone (hereinafter the backbone polymer) with a first polymerthat is grafted onto the backbone polymer. The first polymer comprises asurface energy reducing moiety that comprises either fluorine, siliconor a combination of fluorine and silicon. The second polymer alsocomprises a functional group that is used to crosslink the graft blockcopolymer after it is disposed upon a substrate. Each of the backboneand the graft polymers can be a homopolymer or a copolymer. The graftblock copolymer can self-assemble in the form of a plurality ofbottle-brushes when disposed upon a substrate. The graft block copolymercan then be crosslinked to form a film. Upon crosslinking, the filmcomprises crosslinked bottle-brushes. The polymer backbone istopologically similar to the handle of a bottle-brush, while the polymergrafts emanate radially outwards from the graft block copolymer backboneto form a structure that is similar to the bristles of the bottle-brush,hence the use of the term “bottle-brush”.

Disclosed herein too is a graft block copolymer that comprises aplurality of block copolymers each of which comprise the backbonepolymer and where the first polymer and a second polymer are graftedonto the backbone. The backbone polymer may be a homopolymer or a blockcopolymer. The first polymer and the second polymer can be homopolymersor copolymers. In an exemplary embodiment, the first polymer is ahomopolymer that comprises a surface energy reducing moiety, while thesecond polymer is a copolymer that has a functional group through whichthe graft block copolymer is crosslinked.

When the graft block copolymer is disposed upon a substrate it forms afilm that comprises bottle-brush polymers that are then crosslinkedtogether by reacting the functional groups.

In one embodiment, the graft block copolymer comprises a first blockpolymer and a second block polymer. The first block polymer thuscomprises the backbone polymer with the first polymer (a homopolymer)grafted onto the backbone polymer. The first polymer is also referred toherein as the first graft polymer. The second block polymer comprisesthe backbone polymer with the second polymer (a copolymer) grafted ontothe backbone polymer. The second polymer is also referred to herein asthe second graft polymer. The first graft polymer and the second graftpolymer are also referred to as flexible polymers. The first blockpolymer is therefore a copolymer while the second block polymer is aterpolymer. The first polymer and/or the second polymer comprises afunctional group that is used to crosslink the graft block copolymer. Inone embodiment, the graft block copolymer is crosslinked after it isdisposed upon a substrate.

The first polymer comprises the surface energy reducing moiety thatdrives higher degrees of self-assembly when the graft block copolymer isdisposed upon a substrate. The presence of the surface energy reducingmoiety results in domain sizes and inter domain periodic spacing thatare less than 30 nanometers, preferably less than 20 nanometers, andmore preferably less than 15 nanometers, when the copolymer is disposedupon a substrate. These narrow domain sizes and narrow interdomainspacings are very useful for lithography. They can be used to producesemiconductors and other electronic components. In one embodiment, thegraft block copolymer can be crosslinked and then used as a negativetone photoresist. In another embodiment, the graft block copolymer isnot crosslinked and is used as a positive tone photoresist.

Disclosed herein too is a method of manufacturing the graft blockcopolymer. The method comprises producing a series of macromonomers(that form the backbone polymer) and then performing sequentialgrafting-through polymerizations to create the graft copolymer.Alternatively, grafting-onto or grafting-from techniques can be used forthe graft copolymer syntheses.

Disclosed herein too is a photoresist composition that comprises thegraft block copolymer, a photoacid generator and a crosslinker. Thephotoresist composition is manufactured by crosslinking the photoresistcomposition that comprises bottle-brush polymers that have both thesurface energy reducing and reactive moieties. Disclosed herein too arearticles that comprise the graft block copolymer. In one embodiment, thearticle comprises a photoresist.

FIG. 1 depicts a polymeric graft block copolymer 200 (having a bottlebrush morphology) that comprises a polymer backbone 202 (hereinafter the“backbone polymer”) of length “l” that is reacted to the graft polymer204 (hereinafter the “first graft polymer)”. The first graft polymer canbe covalently reacted to the polymer backbone along a portion of thelength of the backbone or along the entire length of the backbone. Thefirst polymer can also be covalently bonded to the backbone polymerbackbone 202 along the entire length of the backbone and could extendradially outward in any direction or combination of directions from thebackbone or along a portion of the circumference of the backbone. In ournomenclature, bottle-brush polymers are different from polymer brushesin that in a polymer brush, the graft polymer is reacted to only onesurface of a substrate, while in a bottle brush polymer, the graftpolymer is grafted on all sides of the polymer backbone, thus producinga morphology that appears to be bottle-brush like in appearance. Polymerbrushes are analogous in morphology to a field of grass, where thepolymer is the grass and is disposed on a substrate (which is analogousto the soil in which the grass grows).

In one embodiment, the graft block copolymers 200 self-assemble (uponbeing disposed upon a surface) such that the resulting assembly displaysorder in at least one direction, specifically at least in twodirections, and more specifically at least in three directions. In oneembodiment, the graft block copolymer bottle-brushes self-assemble (uponbeing disposed upon a surface) such that the resulting assembly displaysorder in at least two mutually perpendicular directions, and morespecifically in at least three mutually perpendicular directions. Theterm “order” refers to periodicity between repeating structures in theassembly when measured in a particular direction.

The backbone polymer is generally used to form the polymer backbone 202of the graft block copolymer. It is desirable for the backbone polymerthat forms the backbone to allow for sequential polymerization ofmacromonomers to manufacture the graft block copolymers. In oneembodiment, the backbone polymer can be one that comprises a strainedring along the chain backbone. In another embodiment, the backbonepolymer can be a polyacetal, a polyacrylic, a polycarbonate, apolystyrene, a polyester, a polyamide, a polyamideimide, a polyarylate,a polyarylsulfone, a polyethersulfone, a polyphenylene sulfide, apolyvinyl chloride, a polysulfone, a polyimide, a polyetherimide, apolytetrafluoroethylene, a polyetherketone, a polyether etherketone, apolyether ketone ketone, a polybenzoxazole, a polyoxadiazole, apolybenzothiazinophenothiazine, a polybenzothiazole, apolypyrazinoquinoxaline, a polypyromellitimide, a polyquinoxaline, apolybenzimidazole, a polyoxindole, a polyoxoisoindoline, apolydioxoisoindoline, a polytriazine, a polypyridazine, apolypiperazine, a polypyridine, a polypiperidine, a polytriazole, apolypyrazole, a polypyrrolidine, a polycarborane, apolyoxabicyclononane, a polydibenzofuran, a polyphthalide, apolyanhydride, a polyvinyl ether, a polyvinyl thioether, a polyvinylalcohol, a polyvinyl ketone, a polyvinyl halide, a polyvinyl nitrile, apolyvinyl ester, a polysulfonate, a polynorbornene, a polysulfide, apolythioester, a polysulfonamide, a polyurea, a polyphosphazene, apolysilazane, a polyurethane, or the like, or a combination including atleast one of the foregoing polymers. In an exemplary embodiment, thebackbone polymer is polynorbornene. The ring of the polynorbornenerepeat units may, if desired, be substituted with an alkyl group, anaraalkyl group, or an aryl group.

The number of repeat units in the backbone polymer (that forms thebackbone of the copolymer) is about 3 to about 75, specifically about 10to about 60, specifically about 25 to about 45. The number averagemolecular weight of the backbone is 200 to 10,000 grams per mole asmeasured by GPC. In a preferred embodiment, the number average molecularweight of the backbone is 3,050 to 5,500 grams per mole as measured byGPC.

The backbone polymer (that forms the polymer backbone) has grafted ontoit the first polymer thereby forming a graft copolymer. In oneembodiment, the backbone polymer has grafted onto it one or moredifferent types of graft polymers. In another embodiment, the backbonepolymer has grafted onto it two or more different types of graftpolymers. The graft block copolymer can thus be a block copolymer, analternating copolymer, an alternating block copolymer, a randomcopolymer, a random block copolymer, or a combination thereof.

In one embodiment, the graft block copolymer can comprise the backbonepolymer with a first polymer that is grafted onto the backbone polymer.The first polymer is preferably a homopolymer and comprises the surfaceenergy reducing moiety. The surface energy reducing moieties generallycomprise silicon atoms, fluorine atoms, or a combination of fluorineatoms and silicon atoms. The surface energy reducing moiety facilitatesa high degree of self-assembly when the graft block copolymer isdisposed upon a substrate. The first polymer may be covalently orionically bonded onto the backbone polymer. In an exemplary embodiment,the first polymer is covalently bonded onto the backbone polymer.

In one embodiment, the first polymer is a poly(fluorostyrene) having 1to 5 fluorine substituents on the styrenic moiety, a poly(fluoro-hydroxystyrene), where the styrenic moiety can have 1 to 4 hydroxylsubstituents and 1 to 4 fluorine substituents and where the location ofthe hydroxyl substituents and the fluorine substituents are independentof each other, a poly(tetrafluoro-para-hydroxy styrene), or a copolymerthereof. In an exemplary embodiment, the first polymer is apoly(tetrafluoro-para-hydroxy styrene). Exemplary first polymers are apoly(fluorostyrene), a poly(tetrafluoro-hydroxy styrene), or acombination comprising at least one of the foregoing first polymers.

In one embodiment, it is desirable for the first polymer (e.g., thepoly(fluorostyrene)) to have a water contact angle of 70 to 90 degrees.In an exemplary embodiment, it is desirable for the first polymer tohave a preferred water contact angle of 85 to 90 degrees.

The first polymer generally has a number of repeat units of 5 to 20,preferably 7 to 16, and more specifically 8 to 14. In one embodiment,the first polymer has a number average molecular weight of 1350 to 6000Daltons when measured using gel permeation chromatography (GPC). Thefirst polymer has a PDI of 1.05 to 1.20, specifically 1.08 to 1.12 asdetermined by GPC.

In an exemplary embodiment, the first block polymer of the graft blockcopolymer comprises a polynorbornene backbone polymer to which isgrafted the first polymer that comprises a poly(tetrafluoro-para-hydroxystyrene) and has the structure in the formula (1) below:

where n is 5 to 20 and q is 3 to 75.

As detailed above, the graft block copolymer can also comprise a secondpolymer that is grafted onto the backbone polymer in addition to thefirst polymer. The first polymer is the homopolymer detailed above,while the second polymer is a copolymer. In one embodiment, the secondpolymer does not contain a surface energy reducing moiety that comprisessilicon, fluorine, or a combination of silicon or fluorine. In anotherembodiment, the second polymer contains the surface energy reducingmoiety that comprises silicon, fluorine, or a combination of silicon orfluorine, but has a different chemical structure from the first polymer.The second polymer may also contain a functional group that contains afunctional group that facilitates crosslinking of the graft blockcopolymer.

In one embodiment, the second polymer is a poly(hydroxy styrene), apoly(N-phenyl maleimide), or a copolymer thereof. In another embodiment,the poly(hydroxy styrene) is a poly(para-hydroxy styrene). In anexemplary embodiment, the second polymer is a copolymer of poly(hydroxystyrene) and poly(N-phenyl maleimide) denoted by poly(para-hydroxystyrene-co-N-phenyl maleimide). When the second polymer is a copolymerof poly(hydroxy styrene) and poly(N-phenyl maleimide) denoted bypoly(para-hydroxy styrene-co-N-phenyl maleimide), the poly(hydroxystyrene), the molar ratio of poly(N-phenyl maleimide) topoly(para-hydroxy styrene-co-N-phenyl maleimide) is 1:6 to 6:1,specifically 1:3 to 3:1, and more specifically 1:2 to 2:1. In anexemplary embodiment, the molar ratio of poly(N-phenyl maleimide) topoly(para-hydroxy styrene-co-N-phenyl maleimide) in the second polymeris 1:1.

In one embodiment, it is desirable for the second polymer (e.g., thecopolymer of polyhydroxystyrene and poly(N-phenylene maleimide) and tohave a contact angle of 15 to 80 degrees, when contacted with water. Inan exemplary embodiment, it is desirable for the second polymer to havea preferred water contact angle of 45 to 65 degrees.

The second polymer generally has a number of repeat units of 6 to 95,preferably 12 to 30, and more preferably 14 to 28 when measured usinggel permeation chromatography (GPC). In one embodiment, the secondpolymer has a number average molecular weight of 1850 to 6250 Daltonswhen measured using GPC. The second polymer has a PDI of 1.05 to 1.30,preferably 1.05 to 1.15 as determined by GPC.

In another exemplary embodiment, the second block graft comprises apolynorbornene backbone to which is grafted the second polymer thatcomprises poly(para-hydroxy styrene-co-N-phenyl maleimide) and has thestructure in the formula (2) below:

where m is 10 to 40, x is 0.25 to 1.5, y is 0.25 to 1.5 and p is 3 to75.

The first block polymer is reacted with the second block polymer toproduce the graft block copolymer having the structure of the formula(3) below:

where m, n, p, q, x and y are specified above.

The copolymer can be manufactured in a batch process or in a continuousprocess. The batch process or the continuous process can involve asingle or multiple reactors, single or multiple solvent and single ormultiple catalysts (also termed initiators).

In one embodiment, in one method of producing the graft block copolymer,the first block polymer is synthesized separately from the second blockpolymer. The first block polymer is reactively bonded to the secondblock polymer to form the graft block copolymer.

The first block is manufactured by reacting a precursor to the backbonepolymer with a chain transfer agent to form backbone polymerprecursor-chain transfer agent moiety in a first reactor. The backbonepolymer precursor-chain transfer agent moiety is then reacted with aprecursor to the first polymer to form the first polymer usingreversible addition-fragmentation chain transfer (RAFT) polymerization.The first polymer is covalently bonded to the precursor of the backbonepolymer during the RAFT polymerization, which is conducted in the firstreactor in the presence of a first solvent and a first initiator. Theprecursor to the backbone polymer is then polymerized via ring openingmetathesis polymerization (ROMP) to form the first block polymer. TheROMP reaction may be conducted in the first reactor or in anotherreactor. The first block polymer comprises the backbone polymer with thefirst polymer grafted onto it. This first block polymer may be disposedupon a substrate to produce a self-assembled film without copolymerizingit to the second block. The film can then be crosslinked usingradiation.

The second block polymer may be polymerized in a second reactor ifdesired. A precursor to the backbone polymer is reacted with a chaintransfer agent to form a backbone polymer precursor-chain transfer agentmoiety. The backbone polymer precursor-chain transfer agent moiety isthen reacted with the precursor to the second polymer to form the secondpolymer using reversible addition-fragmentation chain transfer (RAFT)polymerization. The second polymer is covalently bonded to the firstpolymer precursor-chain transfer agent moiety during the RAFTpolymerization, which is conducted in the presence of a second solventand a second initiator. Since the second polymer is a copolymer, thereare two or more precursors that are reacted together with the precursorto the backbone polymer to form the second graft polymer. The precursorto the second polymer is then polymerized via a second ring openingmetathesis polymerization (ROMP) to form the second block polymer. Thesecond block polymer comprises the backbone polymer with the secondpolymer grafted onto it. In the production of the first and the secondblock polymers, the first reactor may be the same as the second reactor,the first solvent may be the same as the second solvent and the firstinitiator may be the same as the second initiator. In one embodiment,the first reactor may be different from the second reactor, the firstsolvent may be different from the second solvent and the first initiatormay be different from the second initiator.

In one embodiment, the first block polymer is reacted with the secondblock polymer in a second ring opening metathesis polymerization to formthe graft block copolymer. The second ring opening metathesispolymerization may be conducted in either the first reactor, the secondreactor or in a third reactor. The graft block copolymer is thenpurified by a variety of different methods that are listed below. It maythen be disposed upon a substrate to produce a higher degree ofself-assembly than the self-assembly produced by disposing either thefirst block polymer or the second block polymer by themselves on thesubstrate.

In an exemplary embodiment, when the backbone polymer is polynorbornene,when the first polymer is poly(tetrafluoro-para-hydroxy styrene) andwhen the second polymer is poly(para-hydroxy styrene-co-N-phenylmaleimide), the reaction to produce the graft block copolymer is asfollows.

The first polymer is produced by reacting the norbornene with adithioester chain transfer agent to produce a norbornene-chain transferagent moiety. The norbornene-chain transfer agent moiety is then reactedwith tetrafluoro-para-hydroxy styrene (TFpHS) monomer in a RAFT reactionto homopolymerize the tetrafluoro-para-hydroxy styrene to form thenorborne-poly(tetrafluoro-para-hydroxy styrene) homopolymer (i.e., thefirst polymer). The reaction is demonstrated in reaction (1) below.

In the reaction (1) above, the molar ratio of the norbornene to thechain transfer agent is 0.5:1 to 1:0.5, preferably 0.75:1 to 1:0.75 andmore preferably 0.9:1 to 1:0.9. In an exemplary embodiment, the molarratio of the norbornene to the chain transfer agent is 1:1.

The molar ratio of the norbornene-chain transfer agent to thetetrafluoro-para-hydroxy styrene (TFpHS) monomer is 1:10 to 1:100,preferably 1:15 to 1:50 and more preferably 1:20 to 1:30. In anexemplary embodiment, the molar ratio of the norbornene-chain transferagent to the tetrafluoro-para-hydroxy styrene (TFpHS) is 1:30.

The reaction (1) above may be conducted in a first solvent. Suitablesolvents for conducting the reaction are polar solvents, non-polarsolvents, or combinations thereof. Examples of solvents are aproticpolar solvents, polar protic solvents, or non-polar solvents. In oneembodiments, aprotic polar solvents such as propylene carbonate,ethylene carbonate, butyrolactone, acetonitrile, benzonitrile,nitromethane, nitrobenzene, sulfolane, dimethylformamide,N-methylpyrrolidone, 2-butanone, acetone, hexanone, acetylacetone,benzophenone, acetophenone, or the like, or combinations comprising atleast one of the foregoing solvents may be used. In another embodiment,polar protic solvents such as water, methanol, acetonitrile,nitromethane, ethanol, propanol, isopropanol, butanol, or the like, orcombinations comprising at least one of the foregoing polar proticsolvents may also be used. Other non-polar solvents such a benzene,alkylbenzenes (such as toluene or xylene), methylene chloride, carbontetrachloride, hexane, diethyl ether, tetrahydrofuran, 1,4-dioxane, orthe like, or combinations comprising at least one of the foregoingsolvents may also be used. Co-solvents comprising at least one aproticpolar solvent and at least one non-polar solvent may also be utilized tomodify the swelling power of the solvent and thereby adjust the rate ofreaction. In an exemplary embodiment, the first solvent is 2-butanone.It is desirable to use anhydrous solvent for conducting the reaction.

The weight ratio of the solvent to the TFpHS is about 1:1 to about 5:1,specifically about 1.5:1 to about 3:1, and more specifically about 1.6:1to about 2:1.

A first initiator may be used to initiate the first RAFT reaction.Examples of suitable initiators are azobisisobutyronitrile (AIBN),4,4′-azobis(4-cyanovaleric acid) (ACVA), also called4,4′-azobis(4-cyanopentanoic acid), di-tert-butyl peroxide (tBuOOtBu),benzoyl peroxide ((PhCOO)₂), methyl ethyl ketone peroxide, tert-amylperoxybenzoate, dicetyl peroxydicarbonate, or the like or a combinationcomprising at least one of the foregoing initiators. The first initiatormay also be a radical photoinitiator. Examples are benzoyl peroxide,benzoin ethers, benzoin ketals, hydroxyacetophenone, methylbenzoylformate, anthroquinone, triarylsulfonium hexafluorophosphate salts,triarylsulfonium hexafluoroantimonate salts, phosphine oxide compoundssuch as Irgacure 2100 and 2022 (sold by BASF), or the like, or acombination comprising at least one of the foregoing radical initiators.

The initiator is used in molar ratio of 0.05 to 0.2 with respect to thenorbornene-chain transfer agent. In an exemplary embodiment, theinitiator is used in molar ratio of 0.07 to 0.18 with respect to thenorbornene-chain transfer agent.

The first RAFT reaction between the norbornene-chain transfer agent andthe tetrafluoro-para-hydroxy styrene to form the first polymer isconducted in the first reactor under agitation and at a temperature of50 to 80° C., preferably 60 to 70° C. In an exemplary embodiment, thefirst RAFT reaction is conducted at a temperature of 65° C. The firstpolymer may be purified after its preparation by precipitation, washing,distillation, decanting, centrifugation, or the like. In an exemplaryembodiment, the first polymer is purified by precipitation in hexane.

The second polymer is produced by reacting the norbornene with adithioester chain transfer agent to produce a norbornene-chain transferagent moiety. The norbornene-chain transfer agent moiety is then reactedwith para-hydroxy styrene (pHS) and N-phenyl maleimide (PhMI) in asecond reactor to produce the second polymer. The reaction isdemonstrated in reaction (2) below.

In the reaction (2) above, the molar ratio of the norbornene to thechain transfer agent is 0.5:1 to 1:0.5, preferably 0.75:1 to 1:0.75 andmore preferably 0.9:1 to 1:0.9. In an exemplary embodiment, the molarratio of the norbornene to the chain transfer agent is 1:1.

The molar ratio of para-hydroxy styrene to N-phenyl maleimide is 0.5:1to 1:0.5, preferably 0.75:1 to 1:0.75 and more preferably 0.9:1 to1:0.9. In an exemplary embodiment, the molar ratio of the para-hydroxystyrene to N-phenyl maleimide is 1:1.

The molar ratio of the norbornene-chain transfer agent to thepara-hydroxy styrene and N-phenyl maleimide is 1:10 to 1:100, preferably1:15 to 1:50 and more preferably 1:2 to 1:40. In an exemplaryembodiment, the molar ratio of the norbornene-chain transfer agent tothe monomer of para-hydroxy styrene and N-phenyl maleimide is 1:1.

The reaction (2) above may be conducted in a second solvent. The solventmay be chosen from the list of solvents mentioned above. The weightratio of the solvent to the monomers is about 1:1 to about 10:1,specifically about 2:1 to about 6:1, and more specifically about 3:1 toabout 4:1. In an exemplary embodiment, the second solvent is anhydrous1,4-dioxane. An initiator may be used to initiate the second RAFTreaction. The initiators disclosed above may be used for the second RAFTreaction.

The initiator (for the preparation of the second polymer) is used inmolar ratio of 0.05 to 0.2 with respect to the norbornene-chain transferagent. In an exemplary embodiment, the initiator is used in molar ratioof 0.06 to 0.15 with respect to the norbornene-chain transfer agent.

The second RAFT reaction between the norbornene-chain transfer agent andthe copolymer of para-hydroxy styrene and N-phenyl maleimide to form thesecond polymer is conducted in the first reactor under agitation and ata temperature of 50 to 80° C., preferably 55 to 75° C., and morepreferably 60 to 65° C. In an exemplary embodiment, the second RAFTreaction is conducted at a temperature of 65° C. The second polymer maybe purified after its preparation by precipitation, washing,distillation, decanting, centrifugation, or the like. In an exemplaryembodiment, the second polymer is purified by precipitation in diethylether.

The first polymer prepared via the reaction (1) and the second polymerprepared via the reaction (2) are then subjected to the ring openingmetathesis polymerization reaction (3) to convert the norbornene topolynorbornene and form the graft block copolymer. The reaction may beconducted in the first reactor, the second reactor or in a third reactorthat is independent from the first two reactors. The reactors should becleaned out prior to the reaction. The reaction is conducted in thepresence of a modified Grubbs catalyst. The Grubbs catalyst may be afirst generation Grubbs catalyst, a second generation Grubbs catalyst, aHoveyda-Grubbs catalyst, or the like, or a combination comprising atleast one of the foregoing Grubbs catalyst. The Grubbs catalyst may be afast initiating catalyst if desired.

An exemplary modified Grubbs catalyst is shown in formula (4).

where Mes represents mesitylene or 1,3,5-trimethylbenzene.

The molar ratio of the Grubbs catalyst to the first polymer is 1:1 to1:10. In an exemplary embodiment, the molar ratio of the Grubbs catalystto the first polymer is 1:4. The molar ratio of the Grubbs catalyst tothe second polymer is 1:1 to 1:100. In an exemplary embodiment, themolar ratio of the Grubbs catalyst to the second polymer is 1:30.

In the reaction (3), the molar ratio of the first polymer to the secondpolymer is 1:2 to 1:20. In an exemplary embodiment, in the reaction (3),the molar ratio of the first polymer to the second polymer is 1:7.

In one embodiment, in one method of preparing the graft block copolymer,the catalyst is first added to the reactor with a solvent and themixture is agitated to obtain a homogenous solution. The first polymerand the second polymer are then sequentially added to the reactor. Thereactor is agitated for a period of 1 to 5 hours. The polymerization wasthen quenched with a quencher. The graft block copolymer is thenpurified.

As detailed above, the first polymer and/or the second polymer comprisefunctional groups that are used for crosslinking the graft blockcopolymer. In one embodiment, any aromatic group having an R—OH or anR—SH functional group may be used for crosslinking the graft blockcopolymer. The functional group can be selected from the groupconsisting of a phenol, a hydroxyl aromatic, a hydroxyl heteroaromatic,an aryl thiol, a hydroxyl alkyl, a primary hydroxyl alkyl, a secondaryhydroxyl alkyl, a tertiary hydroxyl alkyl, an alkyl thiol, a hydroxylalkene, a melamine, a glycoluril, a benzoguanamine, an epoxy, a urea, orcombinations thereof. An exemplary functional group is an alkyl alcohol,such as hydroxylethyl, or an aryl alcohol, such as phenol. In anexemplary embodiment, the second polymer comprises the functional groupthat can be used for crosslinking the graft block copolymer.

As noted above, the first polymer, the second polymer and the graftblock copolymer may be purified by a variety of methods. Purification ofthe respective polymers is optional. The reactants, the respectivepolymers, and the graft block copolymer may be purified prior to and/orafter the reaction. Purification may include washing, filtration,precipitation, decantation, centrifugation, distillation, or the like,or a combination comprising at least one of the foregoing methods ofpurification.

In one exemplary embodiment, all reactants including the solvents,initiators, endcapping agents and quenchers are purified prior to thereaction. It is generally desirable to use reactants, solvents andinitiators that are purified to an amount of greater than or equal toabout 90.0 wt % purity, specifically greater than or equal to about 95.0wt % purity and more specifically greater than about or equal to about99.0 wt % purity. In another exemplary embodiment, after polymerizationof the graft block copolymer, it may be subjected to purification bymethods that include washing, filtration, precipitation, decantation,centrifugation or distillation. Purification to remove substantially allmetallic impurities and metallic catalyst impurities may also beconducted. The reduction of impurities reduces ordering defects when thegraft block copolymer is annealed, and reduces defects in integratedcircuits used in electronic devices.

In one embodiment, the copolymer may contain anti-oxidants,anti-ozonants, mold release agents, thermal stabilizers, levelers,viscosity modifying agents, free-radical quenching agents, crosslinkingagents, photo acid generators, dyes, bleachable dyes, photosensitizers,metal oxide nanoparticles, conductive fillers, non-conductive fillers,thermally conductive fillers, other polymers or copolymers such asimpact modifiers, or the like.

The graft block copolymer after purification may be used to manufacturea photoresist composition. The photoresist composition comprises thegraft block copolymer, a solvent, a crosslinking agent, and a photoacidgenerator. In one embodiment, the graft block copolymer may be dissolvedin a solvent along with a photo acid generator and a crosslinking agentand then disposed upon the surface of a substrate to form a graft blockcopolymer film that displays order in one or more directions, preferablyin two or more directions and more preferably in three or moredirections. In one embodiment, these directions are mutuallyperpendicular to each other.

The graft block copolymer disposed upon the surface of the substrateundergoes self-assembly in the form of bottle-brushes on the surface ofthe substrate. In one embodiment, when the copolymer comprises only asingle block (i.e., either the first block polymer or the second blockpolymer), the brushes may self-assemble in only two dimensions on thesurface of the substrate, i.e., the backbone polymers may not beoriented with their backbones disposed perpendicular to the surface ofthe substrate.

When the copolymer comprises two blocks (i.e., it is a graft blockcopolymer) and when one block copolymer comprises the surface energyreducing moiety, the brushes self-assemble in such a manner so that thebackbone polymer is oriented substantially perpendicular to the surfaceof the substrate, while the first and second polymers extend radiallyoutwards from the backbone polymer. The first and second polymers aresubstantially parallel to the surface of the substrate, when thebackbone polymer is disposed substantially perpendicular to the surfaceof the substrate. This morphology is termed the vertical orientedbottle-brush morphology.

In one embodiment, when a monolayer of the graft block copolymer isdisposed on a substrate, the individual polymer chains align with theirbackbones disposed substantially perpendicular to the substrate and thegraft polymers extend radially outwards from the backbone. When two ormore monolayers are disposed on the substrate, the bottle-brushes of thesecond layer may be inter-digitated with the bottle brushes of the firstmonolayer.

In one embodiment, the presence of the fluorine atoms in the terpolymerpromotes the self-assembly of the brushes in three directions. Since thefluorine atom reduces the surface energy of the terpolymer, itfacilitates an orientation of the terpolymer with the first block (theblock that contains the fluorine atoms) located at the farthest end ofthe copolymer from the substrate. The FIGS. 2A and 2B display a top viewand a side view respectively of the terpolymer that contains a polymerbackbone 202, with the first polymer 204 grafted onto the backbone. TheFIG. 2A (which represents the top view) shows that the brushesself-assemble to display order in two mutually perpendicular directions(y and z, which are in the plane of the substrate), while the FIG. 2B(which represents the side view) shows order in the third direction (thex-direction, which is perpendicular to the plane of the substrate). Inthe FIGS. 2A and 2B, the backbone polymer 200 has grafted onto it boththe first polymer 203 (which comprises the surface energy reducingmoiety) and the second polymer 205 (which does not contain a surfaceenergy reducing moiety) and the presence of the surface energy reducingmoiety produces order in three mutually directions. The order isreflected by the periodicity of the structures shown in the FIGS. 2A and2B. The periodicity of the structures could be in either planar orderedarrays such as square packed or hexagonal close packed (hcp) arrays, orthe packing arrangement can have various degrees of packing disorder.Compression and extension of the first and second polymers allows forplanar packing of the bottle brush structures to conform and adjust tothe local enthalpic and entropic energetic requirements in the packedfilm state. When the terpolymer does not contain the surface energyreducing moiety (e.g., fluorine atoms), the self-assembly in thex-direction, which is perpendicular to the plane of the substrate, doesnot take place as completely, and thus a number of the terpolymerswithin the film often lie flat in the y and z direction.

The graft block copolymer may be disposed upon the substrate by avariety of methods such as spray painting, spin casting, dip coating,brush coating, application with a doctor blade, or the like.

In one embodiment, a photoresist composition comprising the graft blockcopolymer, a crosslinking agent, and a photo acid generator may first bemixed (blended) and applied to the substrate to form a self-assembledfilm. The film is then dried to remove solvents. The resultant filmthickness can be measured by a variety of techniques includingellipsometry, AFM, and SEM. When the bottle brush terpolymers aresubstantially self-assemble in the x-direction, which is perpendicularto the plane of the substrate, and if the casting solution issufficiently dilute and the spin speed is adjusted so that the substrateif coated with a monolayer of terpolymer chains, the film thickness willbe approximately an the length of the terpolymer backbone. The film issubjected to radiation to crosslink the terpolymer. A portion of thefilm may be protected from the radiation with a mask and this portionwill not undergo any significant crosslinking. The uncrosslinkedportions of the film may then be removed using a solvent or by etchingleaving behind a patterned film. The patterned film may be used as aphotoresist after baking and further developing.

In one embodiment, a photoresist composition comprising the graft blockcopolymer, a crosslinking agent, and a photoacid generator may first beapplied to the substrate to form a self-assembled film. The film is thendried to remove solvents. The film is subjected to electron beamradiation to crosslink the terpolymers. A portion of the film may befree from irradiation by either not directing the electron beam overthis portion of the film, or with a mask. This unirradiated portion willnot undergo any significant crosslinking. The uncrosslinked portions ofthe film may then be removed using a solvent or by etching leavingbehind a patterned film. The patterned film may be used as a photoresistafter baking and further developing.

Photoacid generators (PAG) may include sulfonium salts. An exemplaryphotoacid generator is triphenylsulfonium hexafluoroantimonate and anexemplary crosslinking agent isN,N,N′,N′,N″,N″-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine(HMMM). Other crosslinking agents are methylols, alkoxymethylene ethers,epoxies, novolacs, melamines, resorcinols, and the like, or acombination comprising at least one of the foregoing crosslinkingagents.

In the photoresist composition, the copolymer is used in amounts of 50to 80 wt %, the photoacid generator is used in amounts of 5 to 25 wt %and the crosslinking agent is used in amounts of 5 to 25 wt %, based onthe total weight of the photoresist composition. The photoresistcomposition may contain solvents if desired.

In one embodiment, the graft block copolymer may be used to selectivelyinteract, or pin, a domain of the block copolymer that is disposed uponthe graft block copolymer to induce order and registration of the blockcopolymer morphology. The graft block copolymer has a topology that caninduce alignment and registration of one or more of the domains of theblock copolymer.

The graft block copolymer can be used as a template to decorate ormanufacture other surfaces that may be used in fields such aselectronics, semiconductors, and the like. The graft block copolymer hasa number of significant advantages over other block copolymers that canself-assemble and that are used in the formation of photoresists. Byusing graft block copolymers where a high degree of control is exertedover the synthetic chemistry, large-areas of vertical alignment of thegraft block copolymer are achieved in films having a thickness of lessthan 50 nanometers (nm), preferably less than 30 nm, without the needfor supramolecular assembly processes as are required for othercomparative forms of linear block copolymer lithography. The structuraland morphological features of the graft block copolymers can be tuned inthe lateral and longitudinal directions thus enabling the preparation ofhigh-sensitivity photoresists. Furthermore, the structural andmorphological features of the graft block copolymers can be tuned in thelateral and longitudinal directions to facilitate an enhancedanisotropic vertical diffusion of photoacid catalyst. These photoresists(each comprising only a few graft block copolymers) can be used forphotolithography in conjunction with high energy electromagneticradiation (e.g., X-ray, electron beam, neutron beam, ionic radiation,extreme ultraviolet (having photons with energies from 10 eV up to 124eV), and the like) with line-width resolutions of less than or equal toabout 30 nm. The high-sensitivity of the graft block copolymerphotoresist further facilitates the generation of latent images withoutpost-exposure baking, which provides a practical approach forcontrolling acid reaction-diffusion processes in photolithography. Thegraft block copolymer, the photoresist composition and the photoresistsderived therefrom are detailed in the following non-limiting examples.

EXAMPLE

This example is conducted to demonstrate the preparation of the graftblock copolymer. The first block comprises a polynorbornene backbonepolymer to which is grafted the first polymer—apoly(tetrafluoro-para-hydroxy styrene). The second block comprises apolynorbornene backbone polymer to which is grafted the second polymer—acopolymer of poly(para hydroxy styrene) and poly(N-phenyl maleimide).

The materials used for the production of the graft block copolymer areas follows:

The modified Grubbs catalyst, 4-hydroxystyrene (pHS),2,3,5,6-tetrafluoro-4-hydroxystyrene (TFpHS), and the norbornene-chaintransfer agents (NB-CTA) were synthesized according to the literaturereports provided in the following references:

-   1. Li, Z.; Ma, J.; Lee, N. S.; Wooley, K. L. J. Am. Chem. Soc. 2011,    133, 1228.-   2. Amir, R. J.; Zhong, S.; Pochan, D. J.; Hawker, C. J., J. Am.    Chem. Soc. 2009, 131, 13949.-   3. Pitois, C.; Wiesmann, D.; Lindgren, M.; Hult, A. Adv. Mater.    2001, 13, 1483.-   4. Li, A.; Ma, J.; Sun, G.; Li, Z.; Cho, S.; Clark, C.;    Wooley, K. L. J. Polym. Sci., Part A: Polym. Chem. 2012, 50, 1681.

The N,N,N′,N′,N″,N″-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine(HMMM) was purchased from TCI and used without further purification. Thephotoacid generators (PAGs)—triphenylsulfonium hexafluoroantimonate forphotolithography, and triphenylsulfonium perfluoro-1-butanesulfonate forelectron beam lithography (EBL), respectively, were provided by DOWElectronic Materials. Other chemicals were purchased from Aldrich,Acros, and VWR and were used without further purification unlessotherwise noted. Prior to use, tetrahydrofuran (THF) was distilled oversodium and stored under N₂. Dichloromethane (CH₂Cl₂) was distilled overcalcium hydride and stored under nitrogen.

The instruments used for the analysis of the precursors and the productsare detailed as follows: ¹H and ¹³C NMR spectra were recorded on aVarian 500 MHz spectrometer interfaced to a UNIX computer using Mercurysoftware. Chemical shifts were referred to the solvent proton resonance.IR spectra were recorded on an IR Prestige 21 system (Shimadzu Corp.)and analyzed by using the IR solution software.

The polymer molecular weight and molecular weight distribution weredetermined by Gel Permeation Chromatography (GPC). The GPC was conductedon a Waters 1515 HPLC (Waters Chromatography, Inc.) equipped with aWaters 2414 differential refractometer, a PD2020 dual-angle (15° and90°) light scattering detector (Precision Detectors, Inc.), and athree-column series (PL gel 5 micrometer (μm) Mixed C, 500 Angstroms(Å), and 10⁴ Å, 300×7.5 millimeters (mm) columns; Polymer Laboratories,Inc.). The system was equilibrated at 40° C. in THF, which served as thepolymer solvent and eluent with a flow rate of 1.0 milliliters perminute (mL/min). Polymer solutions were prepared at a knownconcentration (3-5 milligrams per milliliter (mg/mL)) and an injectionvolume of 200 microliters (μL) was used. Data collection and analysiswere performed with Precision Acquire software and Discovery 32 software(Precision Detectors, Inc.), respectively. Inter-detector delay volumeand the light scattering detector calibration constant were determinedby calibration using a nearly monodisperse polystyrene standard (PolymerLaboratories, M_(p)=90 kiloDaltons (kDa), M_(w)/M_(n)<1.04). Thedifferential refractometer was calibrated with standard polystyrenereference material (SRM 706 NIST), of a known specific refractive indexincrement dn/dc (0.184 milliliters per gram (mL/g)). The dn/dc values ofthe analyzed polymers were then determined from the differentialrefractometer response.

The surface energy of the film was calculated using theOwens-Wendt-Rabel-Kaelble (OWRK) method after measuring the contactangle with an optical tensiometer (KSV Instruments, Attension Theta).The X-ray Photoelectron Spectroscopy (XPS) experiments were performed ona Kratos Axis Ultra XPS system with a monochromatic aluminum X-raysource (10 milliAmperes (mA), 12 kilovolts (kV)). The binding energyscale was calibrated to 285 electron volts (eV) for the main C1s (carbon1s) peak.

The secondary ion mass spectrometry (SIMS) measurements were carried outwith a custom-built SIMS instrument coupled to a time-of-flight (TOF)mass analyzer. The instrument used in these studies is equipped with aC₆₀ effusion source capable of producing C₆₀ ⁺² projectiles with totalimpact energy of 50 kiloelectron volts (keV). The SIMS analysis of thepolymer samples was conducted in the superstatic regime, where less than0.1% of the surface is impacted. This restriction ensured that each timethe surface was impacted by a primary ion, an unperturbed area of thesurface was sampled. The superstatic measurements were conducted in theevent-by-event bombardment-detection mode, where a single primary ionimpacted on the surface and the secondary ions were collected andanalyzed prior to subsequent primary ions impacting the surface. Allsecondary ions detected in a single impact originated from a 10 nmradius on the surface.

Each polymer sample was measured three times at different locations onthe sample by TOF-SIMS. Each measurement consisted of ˜3×10⁶ projectileimpacts on an area ˜100 μm in radius. Multiple measurements wereperformed to ensure sample consistency. A quantitative estimate ofsurface coverage of fluorine containing molecules was calculated foreach sample by using the signals at m/z=19, corresponding to fluorine(F) anion, and m/z=191, corresponding to C₈F₄H₃O anion.

The EBL was carried out by using JEOL JSM-6460 Scanning ElectronMicroscope (SEM) equipped with DEBEN laser stage. The system wasoperated at 30 kV accelerating voltage and 10 picoAmperes (pA) beamcurrent with series of exposure dosage ranging from 200 to 600 μC/cm²(corresponding to 6 to 18 millijoules per square centimeters (mJ/cm²)).A 5×5 μm pattern with features including varied line width, i.e., 10,20, 30, 40, 50, 60, 70, 80, 90, and 100 nm, respectively, and fixed 500nm space was designed and used to evaluate the lithographic behavior ofpolymer resists.

The Atomic Force Microscopy (AFM) imaging was performed on MFP-3D system(Asylum Research) in tapping mode using standard silicon tips(VISTAprobes, T190-25, resonance constant: 190 kilohertz (kHz), tipradius: ˜10 nm, spring constant: 48 newtons per meter (N/m). The FieldEmission Scanning Electron Microscope (FE-SEM) images were collectedwith JEOL JSM-7500F using an accelerating voltage of 7 kV.

Example 1

Synthesis of the first polymer—(NB-P(TFpHS)₁₂). This example wasconducted to demonstrate the manufacturing of the first polymer. Thenomenclature employed here is as follows: NB—norbornene with the chaintransfer agent; TF—tetrafluoro; pHS—para-hydroxystyrene;P(TFpHS)₁₂)—poly(tetrafluoro-para-hydroxystyrene) having 12 repeatunits.

The first polymer was manufactured as follows. To a 25 mL Schlenk flaskequipped with a magnetic stirring bar dried with flame under N₂atmosphere, was added the norbornene-chain transfer agent (NB-CTA) (301milligrams (mg), 0.782 millimoles (mmol)), tetrafluoro-para-hydroxystyrene (TFpHS) (4.49 g, 23.4 mmol), azobisisonitrile (AIBN) (12.7 mg,78.2 micromoles (μmol)), and 10.5 mL of 2-butanone. The mixture wasstirred 10 minutes (min) at room temperature (RT) and degassed throughfive cycles of freeze-pump-thaw. After the last cycle, the reactionmixture was stirred 10 minutes at RT and immersed into a pre-heated oilbath at 65° C. to start the copolymerization. After 11 hours (h), thepolymerization was quenched by cooling the reaction flask with liquidnitrogen (N₂). The copolymer was purified by precipitation into 300milliliters (mL) of hexane twice. The pink oil was collected throughcentrifugation, washed with 300 mL of hexane, and kept under vacuumovernight for removing residual solvents. The yield was 1.4 grams (g) ofproduct, which is a 60% yield based upon ˜45% monomer conversion.M_(n, GPC)=2,750 Daltons (Da) (laser detector), PDI=1.07. ¹H NMR (500MHz, DMSO-d₆) δ 10.95-11.90 (m, phenol OHs), 7.42-7.84 (m, Ar Hs fromRAFT functionality), 6.08 (s, NB CH═CH), 5.10-5.30 (br, backbone chainend CH), 3.90-4.10 (m, NB CH₂OC(O)), 1.02-3.45 (m, all CH₂s and CHs fromTFpHS unit backbone and NB ring). ¹³C NMR (125 MHz, DMSO-d₆) δ 206.9,172.2, 145.6, 144.3, 144.1, 138.7, 137.2, 136.5, 135.0, 133.8, 129.3,127.0, 123.2, 108.4, 73.1, 68.4, 63.0, 45.0, 43.5, 42.4, 41.5, 40.5,38.3, 37.9, 35.8, 34.6, 34.4, 33.2, 31.4, 31.1, 29.6, 29.4, 28.9. IR(cm⁻¹): 2610-3720, 1714, 1658, 1523, 1495, 1459, 1351, 1245, 1142, 1048,947, 866. T_(g)=150° C.

Example 2

This example was conducted to demonstrate the manufacturing of anotherfirst polymer.

Synthesis of the first polymer—(NB-P(TFpHS)₁₀). The nomenclatureemployed here is as follows: NB—norbornene with the chain transferagent; TF—tetrafluoro; pHS—para-hydroxystyrene;P(TFpHS)₁₀)—poly(tetrafluoro-para-hydroxystyrene) having 10 repeatunits.

The first polymer was manufactured as follows. To a 25 mL Schlenk flaskequipped with a magnetic stirring bar dried with flame under N₂atmosphere, was added NB-CTA (510 mg, 1.32 mmol), TFpHS (5.06 g, 26.4mmol), AIBN (12.9 mg, 79.2 μmol), and 12 mL of 2-butanone. The mixturewas stirred 10 minutes at room temperature and degassed through fivecycles of freeze-pump-thaw. After the last cycle, the reaction mixturewas stirred 10 minutes at rt and immersed into a pre-heated oil bath at65° C. to start the copolymerization. After 11 h, the polymerization wasquenched by cooling the reaction flask with liquid N₂. The copolymer waspurified by precipitation into 300 mL of hexane twice. The pink oil wascollected through centrifugation, washed with 300 mL of hexane, and keptunder vacuum overnight for removing residual solvents. Yield 1.7 g ofproduct, 61% yield based upon ˜45% monomer conversion. M_(n, GPC)=2,450Da (laser detector), PDI=1.08. The ¹H NMR, ¹³C NMR and IR spectra weresimilar as that obtained from the first polymer. The glass transitiontemperature (T_(g))=150° C.

Example 3

Synthesis of the second polymer—(NB-P(pHS₁₃-co-PhMI₁₃)). This examplewas conducted to demonstrate the manufacturing of the second polymer.The nomenclature employed here is as follows: NB—norbornene with thechain transfer agent; pHS—para-hydroxystyrene; PhMI—N-phenyl maleimide;P(pHS₁₃-co-PhMI₁₃)—poly(para-hydroxy styrene-co-N-phenyl maleimide)where the para-hydroxy styrene is polymerized having 13 repeat units andthe N-phenyl maleimide is polymerized to the poly(para-hydroxy styrene)and has 13 repeat units too.

The second polymer was manufactured as follows. To a 100 mL Schlenkflask equipped with a magnetic stirring bar dried with flame under N₂atmosphere, was added NB-CTA (635 mg, 1.65 mmol), pHS (3.95 g, 33.0mmol), PhMI (5.76 g, 33.0 mmol), AIBN (26.7 mg, 165 μmol) and 35 mL ofanhydrous 1,4-dioxane. The mixture was stirred 10 minutes at RT anddegassed through four cycles of freeze-pump-thaw. After the last cycle,the reaction mixture was stirred 15 minutes at RT and immersed into apre-heated oil bath at 65° C. to start the copolymerization. After 6.5hours, the polymerization was quenched by cooling the reaction flaskwith liquid N₂. The copolymer was purified by precipitation into 600 mLof diethyl ether twice. The pink precipitate was collected throughcentrifugation, washed with 200 mL of diethyl ether and 200 mL ofhexane, and kept under vacuum overnight for removing residual solvents.Yield 3.4 g of product, 60% yield based upon ˜55% conversion for bothmonomers. M_(n, GPC)=3,520 Da (RI detector), M_(n, GPC)=6,870 Da (laserdetector), PDI=1.20. ¹H NMR (500 MHz, DMSO-d₆) δ 9.20-9.80 (br, phenolOHs), 6.20-7.92 (m, Ar Hs), 6.08 (br, NB CH═CH), 5.10-5.43 (br, backbonechain end CH), 3.90-4.13 (m, NB CH₂OC(O)), 0.76-3.22 (m, all CH₂s andCHs from pHS unit backbone and NB ring, all CHs from MI units). ¹³C NMR(125 MHz, DMSO-d₆) δ 204.9, 176.8, 171.8, 156.7, 154.9, 136.8, 136.2,132.0, 129.7, 129.0, 128.8, 126.8, 115.5, 114.7, 68.0, 61.9, 51.6, 44.6,43.2, 42.2, 41.1, 37.6, 34.8, 34.6, 34.4, 33.2, 31.4, 31.1, 29.6, 29.4,28.9. IR (cm⁻¹): 3118-3700, 2790-3090, 1774, 1701, 1610, 1506, 1450,1380, 1262, 1185, 845, 750. The glass transition temperature(T_(g))=130° C.

Example 4

Synthesis of the second polymer—(NB-P(pHS₈-co-PhMI₈)). This example wasalso conducted to demonstrate the manufacturing of the second polymer.The nomenclature employed here is as follows: NB—norbornene with thechain transfer agent; pHS—para-hydroxystyrene; PhMI—N-phenyl maleimide;P(pHS₈-co-PhMI₈)—poly(para-hydroxy styrene-co-N-phenyl maleimide) wherethe para-hydroxy styrene is polymerized having 8 repeat units and theN-phenyl maleimide is polymerized to the poly(para-hydroxy styrene) andhas 8 repeat units too.

The second polymer was manufactured as follows. To a 50 mL Schlenk flaskequipped with a magnetic stirring bar dried with flame under N₂atmosphere, was added NB-CTA (802 mg, 2.08 mmol), pHS (2.50 g, 20.8mmol), PhMI (3.60 g, 20.8 mmol), AIBN (16.9 mg, 104 μmol) and 20 mL ofanhydrous 1,4-dioxane. The mixture was stirred 10 minutes at RT anddegassed through four cycles of freeze-pump-thaw. After the last cycle,the reaction mixture was stirred 15 minutes at RT and immersed into apre-heated oil bath at 65° C. to start the copolymerization. After 4.5hours, the polymerization was quenched by cooling the reaction flaskwith liquid N₂. The copolymer was purified by precipitation into 600 mLof diethyl ether twice. The pink precipitate was collected throughcentrifugation, washed with 400 mL of diethyl ether and 400 mL ofhexane, and kept under vacuum overnight for removing residual solvents.Yield 2.8 g of product, 73% yield based upon ˜60% conversion for bothmonomers. M_(n, GPC)=2,730 Da (RI detector), M_(n, GPC)=3,800 Da (laserdetector), PDI=1.12. The ¹H NMR, ¹³C NMR and IR spectra were similar tothat measured in the Example 3. The glass transition temperature(T_(g))=130° C.

Example 5 Synthesis of Brush I

This example was conducted to demonstrate the manufacturing of a brush(the graft block copolymer) having the structure((PNB-g-PTFpHS₁₂)₃-b-(PNB-g-P(pHS₁₃-co-PhMI₁₃)₂₆). The nomenclatureadopted here is as follows: PNB—polynorbornene, which is the backbonepolymer; PTFpHS₁₂—poly(tetrafluoro-para-hydroxy styrene) having 12repeat units; P(pHS₁₃-co-PhMI₁₃)—is the same as in Example 3. The((PNB-g-PTFpHS₁₂)₃-b-(PNB-g-P(pHS₁₃-co-PhMI₁₃)₂₆) is therefore acopolymer comprising a first block having a polynorbornene backbone of 3repeat units onto which is grafted the poly(tetrafluoro-para-hydroxystyrene) (the first polymer) having 12 repeat units and a second blockhaving a polynorbornene backbone of 26 repeat units onto which isgrafted the copolymer (the second polymer) comprising 13 repeat units ofpoly(parahydroxystyrene) and 13 repeat units of poly(N-phenylmaleimide).

To a 10 mL Schlenk flask equipped with a magnetic stirring bar driedwith flame under N₂ atmosphere, was added the modified Grubbs catalyst(3.37 mg, 4.63 μmol) and 0.6 mL of anhydrous CH₂Cl₂. The reactionmixture was stirred 1 minute at RT to obtain a homogeneous solution anddegassed through three cycles of freeze-pump-thaw. After the last cycle,the solution of Example 1 (51.0 mg, 18.5 μmol) in 0.2 mL of anhydrousTHF (degassed through two cycles of freeze-pump-thaw) was quickly addedwith an airtight syringe. The reaction mixture was allowed to stir for40 minutes at RT before adding the solution of Example 3 (584 mg, 139μmol) in 4.3 mL of anhydrous THF/CH₂Cl₂ (v/v=3.8:0.5, degassed throughtwo cycles of freeze-pump-thaw) with an airtight syringe. The reactionmixture was stirred for 4 hours at RT before quenching thepolymerization by adding 0.6 mL of ethyl vinyl ether (EVE), and wasfurther stirred for 1 hour at RT. The solution was diluted with 5 mL ofTHF and precipitated into 180 mL of MeOH. The precipitate was collectedthrough centrifugation and re-dissolved into 20 mL of THF/acetone(v/v=1:1). The solution was then precipitated into 200 mL of diethylether. The precipitate was collected through centrifugation, washed with200 mL of diethyl ether and 200 mL of hexane, and kept under vacuumovernight for removing residual solvents. Yield 270 mg of product, 48%yield based upon ˜80% conversion for Example 1 and ˜90% conversion forExample 3, respectively. M_(n, GPC)=189 kDa (laser detector), PDI=1.25.¹H NMR (500 MHz, DMSO-d₆) δ 10.95-11.90 (m, phenol OHs), 9.20-9.80 (br,phenol OHs), 7.42-7.84 (m, Ar Hs from RAFT functionality), 6.20-8.20(br, Ar Hs), 4.98-5.56 (br, brush backbone CH═CH), 0.76-4.06 (m, CH₂sand CHs from pHS, TFpHS, and MI unit backbones and PNB backbone). ¹³CNMR (125 MHz, DMSO-d₆) δ 197.8, 177.3, 172.1, 165.0, 157.2, 132.4,129.3, 127.3, 115.9, 51.7, 42.2, 34.8. IR (cm⁻¹): 3000-3690, 2770-2990,1774, 1697, 1607, 1509, 1450, 1380, 1262, 1175, 1030, 886, 841, 750. Theglass transition temperatures (T_(g)) were 130 and 150° C.,respectively.

Example 6 Synthesis of Brush II

This example was also conducted to demonstrate the manufacturing of abrush having the structure((PNB-g-PTFpHS₁₀)₄-b-(PNB-g-P(pHS₈-co-PhMI₈)₃₇). The nomenclatureadopted here is as follows: PNB—polynorbornene, which is the backbonepolymer; PTFpHS₁₀—poly(tetrafluoro-para-hydroxy styrene) having 10repeat units; P(pHS₈-co-PhMI₈)—is the same as in Example 4. The((PNB-g-PTFpHS₁₀)₄-b-(PNB-g-P(pHS₈-co-PhMI₈)₃₇) is therefore a copolymercomprising a first block having a polynorbornene backbone of 4 repeatunits onto which is grafted the poly(tetrafluoro-para-hydroxy styrene)(the first polymer) having 10 repeat units and a second block having apolynorbornene backbone of 37 repeat units onto which is grafted thecopolymer (the second polymer) comprising 8 repeat units ofpoly(parahydroxystyrene) and 8 repeat units of poly(N-phenyl maleimide).

The nomenclature adopted in this example is the same as that adopted inthe Example 5. To a 10 mL Schlenk flask equipped with a magneticstirring bar dried with flame under N₂ atmosphere, was added themodified Grubbs catalyst (5.25 mg, 7.21 μmol) and 0.45 mL of anhydrousCH₂Cl₂. The modified Grubbs catalyst is shown in the formula (4) above.

The reaction mixture was stirred for 1 minute at RT to obtain ahomogeneous solution and degassed through three cycles offreeze-pump-thaw. After the last cycle, the solution of Example 2 (69.7mg, 30.3 μmol) in 0.65 mL of anhydrous THF (degassed through threecycles of freeze-pump-thaw) was quickly added with an airtight syringe.The reaction mixture was allowed to stir for 40 minutes at RT beforeadding the solution of Example 4 (550 mg, 201 μmol) in 5.0 mL ofanhydrous THF (degassed through three cycles of freeze-pump-thaw) withan airtight syringe. The reaction mixture was stirred for 3 hours at RTbefore quenching the polymerization by adding 0.5 mL of ethyl vinylether (EVE), and was further stirred for 1 hour at RT. The solution wasprecipitated into 90 mL of diethyl ether. The precipitate was collectedthrough centrifugation and re-dissolved into 20 mL of acetone. Thesolution was then precipitated into 200 mL of diethyl ether. Theprecipitate was collected through centrifugation, washed with 200 mL ofdiethyl ether and 200 mL of hexane, and kept under vacuum overnight forremoving residual solvents. Yield 550 mg of product, 94% yield basedupon ˜90% conversion for Example 2 and ˜95% conversion for Example 4,respectively. M_(n, GPC)=152 kDa (laser detector), PDI=1.26. The ¹H NMR,¹³C NMR and IR spectra were similar as that for Example 5. The glasstransition temperatures were 130 and 150° C., respectively.

Example 7

This example demonstrates the manufacturing of a control sample thatdoes not contain a block that has a surface energy reducing moiety. Thecontrol sample has the formula ((PNB-g-P(pHS₁₃-co-PhMI₁₃)₂₄) andcomprises a backbone that contains a backbone polymer of polynorbornenehaving 24 repeat units with a copolymer comprising 13 repeat units ofpoly(parahydroxystyrene) and 13 repeat units of poly(N-phenylmaleimide). The polymer forms a brush that does not display the samedegree of self-assembly as the brush that contains the fluorine atom(the fluorine atom being an example of the surface energy reducingmoiety).

The brush polymer was manufactured as follows. To a 10 mL Schlenk flaskequipped with a magnetic stirring bar dried with flame under N₂atmosphere, was added the modified Grubbs catalyst (1.04 mg, 1.43 μmol)and 0.3 mL of anhydrous CH₂Cl₂. The reaction mixture was stirred for 1minute at RT to obtain a homogeneous solution and degassed through threecycles of freeze-pump-thaw. After the last cycle, the solution ofExample 3 (120 mg, 28.6 mmol) in 0.9 mL of anhydrous THF (degassedthrough three cycles of freeze-pump-thaw) was quickly added with anairtight syringe. The reaction mixture was allowed to stir for 60minutes at RT before quenching the polymerization by adding 0.3 mL ofEVE, and was further stirred for 1 hour at RT. The solution wasprecipitated into 60 mL of diethyl ether. The precipitate was collectedthrough centrifugation and re-dissolved into 5 mL of acetone. Thesolution was then precipitated into 90 mL of diethyl ether/hexane(v/v=2:1). The precipitate was collected through centrifugation, washedwith 100 mL of hexane twice, and kept under vacuum overnight forremoving residual solvents. Yield 95 mg of product, 83% yield based upon˜95% conversion for Example 3. M_(n, GPC)=165 kDa (laser detector),PDI=1.16. ¹H NMR (500 MHz, DMSO-d₆) δ 9.20-9.80 (br, phenol OHs),7.42-7.84 (m, Ar Hs from RAFT functionality), 6.20-8.20 (br, Ar Hs),4.98-5.56 (br, brush backbone CH═CH), 0.76-4.06 (m, CH₂s and CHs frompHS, and MI unit backbones and PNB backbone). ¹³C NMR (125 MHz, DMSO-d₆)δ 197.6, 177.4, 172.0, 165.0, 157.2, 132.4, 129.3, 127.3, 115.9, 51.7,42.2, 34.8. IR (cm⁻¹): 2880-3690, 1775, 1694, 1613, 1596, 1515, 1499,1452, 1381, 1174, 841, 750, 689. The glass transition temperature(T_(g)): 130° C.

Example 8

This example was conducted to demonstrate the manufacturing of a polymerthin film from the brushes of Example 5 (brush I), 6 (brush II) or 7(brush control). The solution of respective polymer in cyclohexanone(1.0 wt %) was prepared and passed through a PTFE syringe filter (220 nmpore size) before using. The solution was applied onto a UV-O₃pre-treated silicon wafer (the amount of applied polymer solution shouldbe sufficient to cover the whole wafer surface) and spin coated at 500revolutions per minute (rpm) for 5 seconds (s), followed by spinning at3,000 rpm for 30 seconds (200 rpm/s acceleration rate for each step) toafford respective thin films with thicknesses of 18 to 25 nm.

The polymer film-coated silicon wafer was kept in a desiccator filledwith saturated acetone atmosphere under vacuum for 20 hours. After theannealing process, the excess solvent was removed by pumping undervacuum and the N₂ gas was slowly backfilled to open the desiccator.

The respective films were then characterized by tapping-mode atomicforce microscopy (AFM). The 25 nm-thick film from the control sample(Example 7) showed noticeable phase segregation. The FIG. 3 depictsphotomicrographs of these samples. The FIG. 3A show the brush controlsuggests the formation of cylindrical assemblies. However, theseassemblies showed low degrees of order and relatively large sizes (>50nm, estimated from the inserted imaging in the FIG. 3A).

By comparison, the films from brush I (Example 5) and II (Example 6)exhibited sufficiently homogeneous surface topology (FIGS. 3B and 3C,respectively) with root mean square (RMS) roughness less than 0.2 nm.The film thickness, as measured by AFM, was 18±2 nm and 22±2 nm forbrush I and II, respectively, which showed agreement with the PNBbackbone contour length of each brush precursor (17.4 and 24.6 nm forbrush I and II, respectively). Therefore, the tunability of the radialdimension of molecular brush could provide a feasible approach formanipulating the film thickness and therefore a parameter fordetermining pattern features in direct writing lithographic processes.

The surface topographical homogeneities and the approximatelymonomolecular layer thicknesses of the brush films suggest that thebrush polymer components within the films prefer to adopt perpendicularorientations to the wafer surface. Without being limited to theory, thevertical alignment can be attributed to the intrinsically cylindricaltopology of brush polymers, which is induced by the strongsize-exclusion effects between covalently-tethered dense polymer grafts.The fluorinated block segments in the unique graft block copolymers arebelieved to contribute effects to promote and assist in achievingvertical alignment, due to their preferential surface migration drivenby their relatively lower surface energy.

Example 9

This example was conducted to demonstrate the manufacturing of a polymerthin film from compositions that contain the brushes of Example 5 (brushI), 6 (brush II) or 7 (brush control) and to demonstrate thecrosslinking of the film as well as the preparing of a negative tonephotoresist (by either exposing portions of the film to UV light or toan electron beam).

Triphenylsulfonium hexafluoroantimonate was used as photoacid generator(PAG) andN,N,N′,N′,N″,N″-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine(HMMM) was selected as both multivalent cross-linker and acid quencher.The solution of polymer:HMMM:PAG was mixed in a weight ratio of0.75:0.15:0.10 wt % in cyclohexanone was prepared and passed through aPTFE syringe filter (220 nm pore size) before casting the film asdetailed in the Example 8. The solution was applied onto UV-O₃pre-treated silicon wafer (the amount of applied solution should besufficient to cover the whole wafer surface) and spin coated at 500 rpmfor 5 seconds, followed by spinning at 3,000 rpm for 30 seconds (200rpm/s acceleration rate for each step) to afford thin films withthicknesses of 25 to 28 nm.

The polymer resist film-coated wafer was exposed to the UV light source(254 nm, 6 W) via a quartz photomask at a distance of about 20 cm for 2minutes. After exposure, the exposed film was post-baked on a 120° C.hotplate for 1 minute and then the unexposed area was developed bydipping the wafer into 0.26 M tetramethylammonium hydroxide (TMAH)aqueous solution for 30 seconds, followed by rinsing with DI water anddrying with N₂ flow.

The films were alternatively exposed to electron beam “writing” with apredesigned pattern, the exposed wafer was post-baked on a 90° C.hotplate for 1 minute and dipped into 0.26 M TMAH_((aq)) solution for 1minute. The wafers were rinsed with DI water and dried by N₂ flow.

The thin film was characterized by tapping-mode atomic force microscopy(AFM). The results are shown in the photomicrograph in the FIG. 3. The25 nm-thick film from the brush control showed noticeable phasesegregation (phase image in FIG. 3A), which suggested the formation ofcylindrical assemblies. However, these assemblies showed low degrees oforder and relatively large sizes (>50 nm, estimated from the insertedimaging in the FIG. 3A). By comparison, the films from brush I and IIexhibited sufficiently homogeneous surface topography (FIGS. 3B and 3Crespectively) with RMS roughness of less than 0.2 nm. The filmthickness, as measured by AFM, was 18±2 nm and 22±2 nm for brush I andII respectively, which showed agreement with the polynorbornene backbonecontour length of each brush precursor (17.4 and 24.6 nm for I and IIrespectively).

The surface topographical homogeneities and the approximatelymonomolecular layer thicknesses of the brush films suggest that thebrush polymer components within the films preferred to adoptperpendicular orientations to the wafer surface. The vertical alignmentscould be attributed to the intrinsically cylindrical topology of brushpolymers, which is induced by the strong size-exclusion effects betweencovalently-bonded polymers that are grafted onto the backbone polymers.Meanwhile, the fluorinated block segments in the graft block copolymerswould contribute effects to promote and assist the vertical alignments,due to their preferential surface migration driven by their relativelylower surface energies.

Example 10

This example was conducted to ascertain the performance of the graftblock copolymer in a lithographic application as a chemically amplifiedresist. After exposure to the electromagnetic radiation described in theExample 9, the samples were subjected to post baking, which is detailedbelow. Triphenylsulfonium hexafluoroantimonate was used as photoacidgenerator (PAG) andN,N,N′,N′,N″,N″-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine(HMMM) was selected as both multivalent cross-linker and acid quencher.Example 9 details the manufacturing of the resist. Atomic forcemicrograph (AFM) images of the respective brushes is shown in the FIG.4.

From the AFM topographic images of the resulting patterns, brush I (FIG.4A) displays a better lithographic performance than brush II (FIG. 4B),as evidenced by noticeably less line-edge roughness (LER) and lessline-broadening effects. Cross-linked polymer residue was present withinthe pattern developed areas for brush II resists, which indicated thatbrush II CAR has a higher sensitivity than a brush I CAR. Although bothbrush-based CARs did not exhibit advantages over the brush control-basedCAR (FIG. 4C) in the micro-scale 254 nm photolithographic survey, theelectron beam lithography (EBL) of the brush resists revealed theirsignificant superiorities over the brush control counterpart in thehigh-resolution nanoscopic pattern formation. Direct-EBL is an EBLprocess without post-exposure baking (PEB). This is the advantage ofusing bottle-brushes, i.e., it allows for the use of direct EBL.

The post-exposure baking EBL (PEB-EBL) studies of brush I, II and thebrush control-based CARs (CAR-I, CAR-II, and CAR-LC, respectively) werecarried out by applying the similar resist formulations as used forUV-photolithography (detailed above), while using the triphenylsulfoniumperfluoro-1-butanesulfonate as PAG. A designed pattern with line widthranging from 10 to 100 nm features was used to evaluate theirlithographic performances, through measuring the height and width ofeach resulting line at two exposure dosages (250 and 400 μC/cm²,corresponding to a EUV (13.5 nm) dose of approximately 7.5 and 12mJ/cm², respectively) by AFM. As shown in FIGS. 2A-2D, both CAR-I andCAR-II could create patterns with full line integrities at each exposuredosage. By comparison, the patterns from CAR-BC (brush control) only hadrational features for the 50 to 100 nm designed lines (FIG. 2F), even atthe relatively higher dosage (400 μC/cm²). Furthermore, the parametersof the patterned lines in FIG. 2F were indeed not qualified forpractical purpose (data not shown).

For the brush CARs in this study, the line features of the latent 30 nmto 100 nm lines were satisfactory, especially for the CAR-II after 400μC/cm² exposure (FIG. 2E). We speculated that the better latentline-width features of CAR-II were induced by the intrinsic geometricfactor of brush II. Although both I and II have cylindricalmorphologies, the relatively shorter grafts in II render it a “thinner”column by reducing the chain entanglements after vertically aligning onthe substrate surface. Currently, an about 30-nm isolated line wasobtained for CAR-II under the aforementioned conditions. It cantherefore be concluded that the brush molecular lengthwise and widthwisedimensional tuning, which can be easily achieved by the current“grafting-through” synthetic strategy, plays a critical role on thelithographic performance and eventually, that molecular pixels could berealized through further systematic optimizations of brush backbone andgraft lengths, together with chemical compositions.

What is claimed is:
 1. A composition comprising: a graft block copolymercomprising: a copolymer comprising: a backbone polymer; and a firstgraft polymer that comprises a surface energy reducing moiety; the firstgraft polymer being grafted onto the backbone polymer; where the surfaceenergy reducing moiety comprises a fluorine atom, a silicon atom, or acombination of a fluorine atom and a silicon atom; a photoacidgenerator; and a crosslinking agent.
 2. The composition of claim 1,where the backbone polymer is a polynorbornene.
 3. The composition ofclaim 1, where the first polymer is a poly(tetrafluoro-para-hydroxystyrene).
 4. The composition of claim 1, where the photoacid generatoris triphenylsulfonium hexafluoroantimonate and where the crosslinkingagent isN,N,N′,N′,N″,N″-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine. 5.The composition of claim 1, where the copolymer is used in amounts of 50to 80 wt %, the photoacid generator is used in amounts of 5 to 25 wt %and the crosslinking agent is used in amounts of 5 to 25 wt %, based onthe total weight of the composition.
 6. A method of manufacturing aphotoresist comprising: mixing a composition comprising: a copolymercomprising: a backbone polymer; and a first graft polymer that comprisesa surface energy reducing moiety; the first graft polymer being graftedonto the backbone polymer; where the surface energy reducing moietycomprises a fluorine atom, a silicon atom, or a combination of afluorine atom and a silicon atom; a photoacid generator; and acrosslinking agent; disposing the composition on a substrate; forming afilm on the substrate; disposing a mask on the film; exposing the filmto electromagnetic radiation to form a crosslinked film that comprisesbottle-brushes; baking the film; and dissolving unreacted portions ofthe film.
 7. The method of claim 6, where the electromagnetic radiationis extreme UV radiation, UV radiation, electron beam radiation and xrayradiation.
 8. The method of claim 6, further comprising using the filmas a photoresist.
 9. The method of claim 8, where the photoresist is anegative tone photoresist.
 10. The method of claim 6, where thephotoresist composition is subjected to annealing.
 11. The method ofclaim 6, where the photoresist composition is dissolved in a solvent.